Production of amorphous silicon film

Details Production of amorphous silicon film Production of amorphous silicon film

1982-05-10

1984-06-05

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, B05D 304, B05D 314

Patent

active

044528280

ABSTRACT:
Disclosed is an production method for plasma chemical vapor deposition (CVD) of amorphous silicon films providing improved throughput and film yield. According to the present invention, a glow discharge is generated in a reaction chamber containing a gaseous silicon-containing compound, such as monosilane (SiH.sub.4) or tetraflourosilane (SiF.sub.4), by the imposition of an electric field between a pair of spaced-apart electrodes within the chamber. The electric field is established by connecting an appropriate DC or high frequency driving voltage to one of the pair of electrodes and ground potential to the other. In the case where a high frequency driving voltage is used, connection to the driven electrode is made through a coupling capacitor, and the frequency of the driving voltage is selected such that a DC potential develops between the pair of electrodes. Substrates on which amorphous silicon films are to be deposited are positioned adjacent to each one of the electrodes, and the connections for the driving voltage and ground to the electrodes are periodically reversed during film deposition. In an alternative embodiment of the invention, multiple pairs of electrodes are arranged within the reaction chamber.

REFERENCES:
patent: 4225222 (1980-09-01), Kempter
Rusler et al., "LCVD-Type Plasma Enhanced Deposition System", Solid State Technology, vol. 22, pp. 88-92, (Dec. 1979).

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