Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-07-31
2007-07-31
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S079000, C257S103000, C257SE33003
Reexamination Certificate
active
10601301
ABSTRACT:
A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.
REFERENCES:
patent: 5584929 (1996-12-01), Kawase
patent: 5679152 (1997-10-01), Tischler et al.
patent: 5714006 (1998-02-01), Kizuki et al.
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 6136626 (2000-10-01), Kidoguchi et al.
patent: 6177057 (2001-01-01), Purdy
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6372041 (2002-04-01), Cho et al.
patent: 6456640 (2002-09-01), Okumura
patent: 6549552 (2003-04-01), Omi et al.
patent: 6592663 (2003-07-01), Sarayama et al.
patent: 6842470 (2005-01-01), Omi et al.
patent: 50-149270 (1975-11-01), None
patent: 56-160400 (1981-12-01), None
patent: 4-114991 (1992-04-01), None
patent: 7-300385 (1995-11-01), None
patent: 9-110576 (1997-04-01), None
patent: 10-7496 (1998-01-01), None
patent: 10-67592 (1998-03-01), None
patent: 11-087850 (1999-03-01), None
patent: 2001-589000 (2001-03-01), None
“Preparation of GaN Single Crystals Using a Na Flux”, H. Yamane et al., Chemical Mater, 1997, vol. 9, No. 2, pp. 413-416.
“InGaN/GaN/AlGaN-Based Laser Diodes With Cleaved Facets Grown on GaN Substrates”, S. Nakamura et al., Applied Physics Letters, 1998, vol. 73, No. 6, pp. 832-834.
“Bulk and Homoepitaxial GaN-growth and Characterization”, S. Porowski, Journal of Crystal Growth, 1998, vol. 189/190, pp. 153-158.
“InGaN/GaN/AlGaN-Based Laser Diodes With Modulation-Doped Strained-Layer Superlattices”, S. Nakamura et al., Japanese Journal of Applied Physics, 1997, vol. 36, No. 12A, pp. 1568-1571.
Yamane, Hisanori, et al., “Morphology and characterization of GaN single crystals grown in a Na flux, Journal of Crystal Growth” (1998), 186, pp. 8-12.
Anonymous submission of information in corresponding Japanese application No. JP11-277045 and English translation thereof, unknown date.
Iwata Hirokazu
Sarayama Seiji
Shimada Masahiko
Yamane Hisanori
Cooper & Dunham LLP
Ho Tu-Tu
Ricoh & Company, Ltd.
LandOfFree
Production of a GaN bulk crystal substrate and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Production of a GaN bulk crystal substrate and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of a GaN bulk crystal substrate and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3757088