Production methods for compound semiconductor device having ligh

Details Production methods for compound semiconductor device having ligh Production methods for compound semiconductor device having ligh

1992-02-20

1993-01-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437 44, 437912, 437944, 148DIG100, 257282, H01L 21265

Patent

active

051822180

ABSTRACT:
The present invention relates to a method of making a compound semiconductor device having a high performance self-aligned LDD structure which has stable characteristics, and is suitable for high integration and high yield, in which after forming a channel layer beneath the substrate surface, using a high performed self-aligned technology, a gate electrode, lightly doped layers and heavily doped layers are formed in predetermined positions by a photolithography for the gate portion. This process of a photolithography is performed only once, therefore, each pattern can be formed with excellent accuracy and reproducibility.

REFERENCES:
patent: 4472872 (1984-09-01), Toyoda et al.
patent: 4509991 (1985-04-01), Tour
patent: 4855246 (1989-08-01), Codella et al.

Affiliated with

Also associated with

Rating

Production methods for compound semiconductor device having ligh does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production methods for compound semiconductor device having ligh, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production methods for compound semiconductor device having ligh will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1412394