Production method of thermoelectric semiconductor alloy,...

Metal founding – Process – Shaping liquid metal against a forming surface

Reexamination Certificate

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C420S590000

Reexamination Certificate

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07997325

ABSTRACT:
A first method for producing a half Heuslar alloy includes quench-solidifying a molten alloy at a cooling rate of 1×102to 1×103° C./sec to produce a half Heuslar alloy having a ratio of strongest peak of the half Heuslar phase of 90% or more in an as-cast state, the alloy having the formula: ABC (wherein A and B each is at least one member selected from Fe, Co, Ni, Ti, V, Cr, Zr, Hf, Nb, Mo, Ta and W, and C is at least one member selected from Al, Ga, In, Si, Ge and Sn). A second method is one in which the half Hueslar alloy has the formula: Ti1-xAxNi1-yBySn1-zCz(wherein each of A and B is at least one member selected from Co, Ni, Ti, V, Cr, Zr, Hf, Nb, Mo, Ta and W, C is at least one selected from Al, Ga, In, Si, Ge and Sn).

REFERENCES:
patent: 7849909 (2010-12-01), Nakajima
patent: 2004/0261833 (2004-12-01), Ono et al.
patent: 2005/0172994 (2005-08-01), Shutoh et al.
patent: 2007/0034245 (2007-02-01), Nakajima
patent: 10-102170 (1998-04-01), None
patent: 2001-189495 (2001-07-01), None
patent: 2003-197985 (2003-07-01), None
patent: 2004-119647 (2004-04-01), None
patent: 2004-253618 (2004-09-01), None
patent: 2004-356607 (2004-12-01), None
patent: 2006-165125 (2006-06-01), None
patent: 135528 (1961-11-01), None
patent: 03/019681 (2003-03-01), None
patent: 2004/017435 (2004-02-01), None
patent: WO 2004/017435 (2004-02-01), None
patent: 2004/095594 (2004-11-01), None
Hanada et al., “Seebeck coefficient of (Fe, V)3Al alloys”, Journal of Alloys and Compounds, Nov. 14, 2001, p. 63-68, vol. 329, No. 1-2, XP004309671.
Kanomata et al., “Magnetic and electrical properties of Fe2+xV1-xAl”, Journal of Alloys and Compounds, Apr. 12, 2001, p. 390-394, vol. 317-318, XP004233233.
Matsuura et al., “Doping effects on thermoelectric properties of the pseudogap Fe2VAI system”, Journal of Japan Inst of metals, 2002, p. 767-771, vol. 66, No. 7, XP008064324.
Satula et al, “Structural and magnetic properties of Fe—Cr—Al alloys with DO3-type structure”, Journal of magnetism and magnetic materials, 1997, p. 240-252, vol. 169, XP004084048.
Liu et al, “Martensitic transformation and magnetic properties of Heusler alloy Ni—Fe—Ga ribbon”, Physics Letters A, 2004, p. 214-220, vol. 329, No. 3, XP004526121.
Liu et al, “Martensitic transformation and shape memory effect in ferromagnetic Heusler alloy Ni2FeGa”, Applied Physics Letters, Jan. 20, 2003, p. 424-426, vol. 82, No. 3, XP012034592.
Umetsu et al, “Magnetic properties and band structures of half-metal-type Co2CrGa Heusler alloy”, Applied Physics Letters, Sep. 13, 2004, p. 2011-2013, vol. 85, No. 11, XP012062528.
Kobayashi et al, “Phase separation and magnetic properties of half-metal-type Co2Cr1-xFexAl alloys”, Applied Physics Letters, Nov. 15, 2004, p. 4684-4686, vol. 85, No. 20, XP012063431.
Shutoh et al, “Thermoelectric properties of the Tix(Zr0.5Hf0.5)1-xNiSn Half-Heusler Compounds”, Thermoelectrics, 2003 22nd International Conference on Thermoelectrics, 2003, p. 312-315, XP008064313.
Yamanaka et al, Kinzoku (Metals), 2004, p. 54-57, vol. 74, No. 8.
Polytechnical Dictionary, edited by A. Yu. Ishlinsky, Moscow, “Soviet Encyclopedia”, p. 530 (1989).
Japanese Office Action dated May 24, 2011 issued in a corresponding Japanese Patent Application No. 2005-369885.

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