Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2004-10-20
2008-11-18
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S464000, C257SE21499
Reexamination Certificate
active
07452752
ABSTRACT:
Provided is a method for producing a semiconductor chip, comprising applying a photothermal conversion layer on a light-transmitting support, provided that upon irradiation of radiation energy, the photothermal conversion layer converts the radiation energy into heat and decomposes due to the heat; laminating the semiconductor wafer and the light-transmitting support through a photocurable adhesive by placing the circuit face and the photothermal conversion layer to face each other, thereby forming a laminated body having a non-circuit face on the outside; grinding the non-circuit face of the semiconductor wafer until the semiconductor wafer reaches a desired thickness; dicing the ground semiconductor wafer from the non-circuit face side to cut it into a plurality of semiconductor chips; irradiating radiation energy from the light-transmitting support side to decompose the photothermal conversion layer, thereby causing separation into a semiconductor chips having the adhesive layer and a light-transmitting support; and optionally removing the adhesive layer from the semiconductor chips.
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Iwasawa Masaru
Noda Kazuki
3M Innovative Properties Company
Ford Kenisha V
Lindsay, Jr. Walter L
Wolf Stephen F.
LandOfFree
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