Production method of III nitride compound semiconductor and...

Details Production method of III nitride compound semiconductor and... Production method of III nitride compound semiconductor and...

2006-11-28

2006-11-28

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C438S044000, C438S481000

Reexamination Certificate

active

07141444

ABSTRACT:
A first Group III nitride compound semiconductor layer31is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride compound semiconductor layer31is exposed at the bottom portion of the trench. Thus, a second Group III nitride compound layer32can be epitaxially grown, laterally, with a top surface of the mesa and a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer31can be prevented in the upper portion of the second Group III nitride compound semiconductor32that is formed through lateral epitaxial growth. Etching may be performed until a cavity portion is provided in the substrate. The layer serving as a nucleus of ELO may be doped with indium (In) having an atomic radius greater than that of gallium (Ga) serving as a predominant element. The first semiconductor layer may be a multi-component layer containing a plurality of numbers of repetitions of a unit of a buffer layer and a single-crystal layer.

REFERENCES:
patent: 5185290 (1993-02-01), Aoyagi et al.
patent: 5798536 (1998-08-01), Tsutsui
patent: 6051849 (2000-04-01), Davis et al.
patent: 6110277 (2000-08-01), Braun
patent: 6121121 (2000-09-01), Koide
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6319742 (2001-11-01), Hayashi et al.
patent: 6329667 (2001-12-01), Ota et al.
patent: 6355497 (2002-03-01), Romano et al.
patent: 6365921 (2002-04-01), Watanabe et al.
patent: 0 551 721 (1993-07-01), None
patent: 0 779 666 (1997-06-01), None
patent: 0 951 055 (1999-10-01), None
patent: 1 045 431 (2000-10-01), None
patent: 1 059 661 (2000-12-01), None
patent: 1 059 677 (2000-12-01), None
patent: 49-149679 (1973-04-01), None
patent: 48-95181 (1973-12-01), None
patent: 51-137393 (1976-11-01), None
patent: 55-34646 (1978-08-01), None
patent: 57-115849 (1982-07-01), None
patent: 58-33882 (1983-02-01), None
patent: 1-316459 (1989-12-01), None
patent: 3-133182 (1991-06-01), None
patent: 4-10665 (1992-01-01), None
patent: 4-84418 (1992-03-01), None
patent: 4-303920 (1992-10-01), None
patent: 5-41536 (1993-02-01), None
patent: 5-110206 (1993-04-01), None
patent: 5-283744 (1993-10-01), None
patent: 5-343741 (1993-12-01), None
patent: 6-196757 (1994-07-01), None
patent: 7-249830 (1995-09-01), None
patent: 7-273367 (1995-10-01), None
patent: 8-64791 (1996-03-01), None
patent: 8-102549 (1996-04-01), None
patent: 8-116090 (1996-05-01), None
patent: 8-222812 (1996-08-01), None
patent: 8-274411 (1996-10-01), None
patent: 9-162125 (1997-06-01), None
patent: 9-199759 (1997-07-01), None
patent: 10-65270 (1998-03-01), None
patent: 10-312971 (1998-11-01), None
patent: 10-321954 (1998-12-01), None
patent: 11-31864 (1999-02-01), None
patent: 11-043398 (1999-02-01), None
patent: 11-135770 (1999-05-01), None
patent: 11-135832 (1999-05-01), None
patent: 11-145516 (1999-05-01), None
patent: 11-145519 (1999-05-01), None
patent: 11-191533 (1999-07-01), None
patent: 11-191657 (1999-07-01), None
patent: 11-191659 (1999-07-01), None
patent: 11-219910 (1999-08-01), None
patent: 11-251632 (1999-09-01), None
patent: 11-260737 (1999-09-01), None
patent: 11-274082 (1999-10-01), None
patent: 11-274649 (1999-10-01), None
patent: 11-289109 (1999-10-01), None
patent: 11-312825 (1999-11-01), None
patent: 11-329971 (1999-11-01), None
patent: 11-330546 (1999-11-01), None
patent: 11-340508 (1999-12-01), None
patent: 2000-21789 (2000-01-01), None
patent: 2000-44121 (2000-02-01), None
patent: 2000-91253 (2000-03-01), None
patent: 2000-106455 (2000-04-01), None
patent: 2000-106473 (2000-04-01), None
patent: 2000-124500 (2000-04-01), None
patent: 2000-150959 (2000-05-01), None
patent: 2000-174393 (2000-06-01), None
patent: 2000-232239 (2000-08-01), None
patent: 2000-244061 (2000-09-01), None
patent: 2000-261106 (2000-09-01), None
patent: 2000-277437 (2000-10-01), None
patent: 2000-299497 (2000-10-01), None
patent: 2000-357663 (2000-12-01), None
patent: 2000-357843 (2000-12-01), None
patent: 2001-60719 (2001-03-01), None
patent: 2001-93837 (2001-04-01), None
patent: 2001-111174 (2001-04-01), None
patent: 2001-122693 (2001-05-01), None
patent: 2001-176813 (2001-06-01), None
patent: 2001-257193 (2001-09-01), None
patent: WO97/11518 (1997-03-01), None
patent: WO 98/47170 (1998-10-01), None
patent: WO 99/65068 (1999-12-01), None
patent: WO 00/04615 (2000-01-01), None
patent: WO 00/55893 (2000-09-01), None
Tsvetanka S. Zheleva, Pendo-Epitaxy A New Approach for Lateral Growth of Gallium Nitride Structures, mrs Internet J. Nitride Semicond. Res. 4SI, G38, (1999).
Japanese Office Action dated Mar. 14, 2006 for Japanese Application No. 2000-71352.
Japanese Office Action dated Mar. 14, 2006 for Japanese Application No. 2000-71353.
Japanese Office Action dated Mar. 14, 2006 for Japanese Application No. 2000-71351.
PCT Forms 338 and 409 (IPER) (PCT/JP02/05446) and translations thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/02628) and translations thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/01159) and translations thereof.
Ujiie et al., “Epitaxial Lateral Overgrowth of GaAs on a Si Substrate”, Japanese Journal of Applied Physics vol. 28, No. 3, Mar. 1989, pp. L337-L339.
Partial Translation of the Office Action for Japanese Patent Application No. 9-311518 dated Jun. 10, 2003.
Wolf et al., “Silicon Processing for the VLSI Era,” vol. 1, p. 5, Lattice Press, 1986.
Translation of PCT Forms 338 and 409 (PCT/JP01928).
Translation of PCT Forms 338 and 409 (PCT/JP01/01396).
Nam et al., “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy”, pp. 2638-2640, Appl. Phys. Lett. 71 (18), Nov. 3, 1997.
Hiramatsu et al., “Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor epitaxy and hydride vapor phase epitaxy”, pp. 104-111, Materials Science and Engineering B59 (1999).
Akasaki et al., “Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga1-xA1xN . . . Movpe” pp. 209-219, Journal of Crystal Growth 98 (1989) North-Holland, Amsterdam.
Yang et al., High quality GaN-InGaN heterostructures grown on (111) silicon substrates, pp. 3566-3568), Appl. Phys. Lett. 69 (23), Dec. 2, 1996.
Wolf et al., for the VLSI Era, vol. 1—Process Technology, p. 5, “Silicon: Single Crystal Growth and Wafer Preparation.”
Luther et al., “Titanium and titanium nitride contacts to n-type gallium nitride ”, Semicond. Sci. Technol. 13 (1998) pp. 1322-1327.
Dimitriadis et al., “Contacts of titanium nitride to—and p-type gallium nitride films”, Solid-State Electronics 43 (1999), pp. 1969-1972.
Zheleva et al., “Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures”, MRS Internet J. Nitride Semicond. Res. 4SI, G3.38 (1999), 6 pages total.
PCT Form 210 (PCT/JP02/05446).
PCT Form 210 (PCT/JP02/02628).
PCT Form 210 ((PCT/JP02/01159).
PCT Form 210 (PCT/JP01/01928).
PCT Form 210 (PCT/JP01/02695).
PCT Form 210 (PCT/JP00/09120).
PCT Form 210 (PCT/JP01/01396).
PCT Form 210 (PCT/JP01/01178).
PCT Form 210 (PCT/JP01/01663).
PCT Form 210 (PCT/JP00/09121).
PCT Form 210 (PCT/JP00/09220).
PCT Form 338 (IPER) (PCT/JP01/02695).
PCT Form 338 (IPER) (PCT/JP01/01663).
PCT Form 338 (IPER) (PCT/JP09120).
PCT Form 409 (PCT/JP01/01928).
PCT Form 409 (PCT/JP01/01396).
Search Report (EP 27057) Jul. 18, 2000.
Search Report (EP 27279) Feb. 15, 2002.
PCT Form 338 (IPER) (PCT/JP00/09121).
Journal of Electronic Materials, vol. 28, No. 4 (Apr. 1999), A Joint Publication of The Minerals, Metals & Materials Society and the Institute of Electrical and Electronics Engineers, pp. 545-551.
III-Vs Review, Covering Advanced Semiconductors Worldwide, vol. 13, No.

Affiliated with

Also associated with

Rating

Production method of III nitride compound semiconductor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production method of III nitride compound semiconductor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method of III nitride compound semiconductor and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3653916