Production method of a semiconductor device

Details Production method of a semiconductor device Production method of a semiconductor device

1992-09-29

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437912, H01L 21265

Patent

active

052504530

ABSTRACT:
A method for producing a field effect transistor includes depositing an insulating film on an active layer produced in a semiconductor substrate and removing a part of the insulating film, leaving a side wall substantially perpendicular to the substrate. A refractory metal is deposited on the surface of the semiconductor substrate and the insulating film. The refractory metal is removed except for a portion at the side wall of the insulating film to produce a gate electrode. A high dopant concentration region is ion implanted using the insulating film and refractory metal as a mask. The insulating film is removed and an intermediate dopant concentration region is ion implanted using the refractory metal as a mask. A source electrode is produced on the high dopant concentration region and a drain electrode is produced on the intermediate dopant concentration region. The invention may be used to produce asymmetrically doped drain and gate regions and an asymmetrically disposed gate electrode.

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Enoki et al, "Optimization of GaAs SAINT Structure for Ion-Iplanted MMIC", ED9_86-9, pp. 23-28.

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