Compositions – Electrically conductive or emissive compositions – Metal compound containing
Reexamination Certificate
2006-08-01
2006-08-01
Kopec, Mark (Department: 1751)
Compositions
Electrically conductive or emissive compositions
Metal compound containing
C252S512000, C252S519120, C252S519510, C252S500000, C252S06230R, C252S06230Q, C361S311000, C361S321200, C361S321500
Reexamination Certificate
active
07083745
ABSTRACT:
This invention provides a method of producing a laminate type dielectric device free from peeling of an electrode layer and a ceramic layer and from voids in both electrode layer and ceramic layer, and an electrode paste material. The invention relates also to an electrode paste material for constituting electrode layers of a laminate type dielectric device produced by at least the steps of alternately laminating ceramic layers11containing a lead element as a constituent component and electrode layers2, and degreasing and baking the laminate, wherein the electrode paste material contains CuO as a principal component of a starting material of an electrically conductive material, a solvent, a binder, and a cooperative material consisting of at least one kind of the main components constituting the ceramic layer11.
REFERENCES:
patent: 63-295491 (1988-12-01), None
patent: 03-048415 (1991-03-01), None
patent: 03-208831 (1991-09-01), None
patent: 05-174612 (1993-07-01), None
patent: 06-223621 (1994-08-01), None
Nagaya Toshiatsu
Shindo Hitoshi
Sumiya Atsuhiro
Yamamoto Takashi
Yasuda Eturo
DENSO Corporation
Kopec Mark
Nippon Soken Inc.
Vijayakumar Kallambella
LandOfFree
Production method for laminate type dielectric device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Production method for laminate type dielectric device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method for laminate type dielectric device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3614023