Production method for ion-implanted MESFET having self-aligned l

Details Production method for ion-implanted MESFET having self-aligned l Production method for ion-implanted MESFET having self-aligned l

1995-12-04

1996-12-03

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 44, 437912, H01L 21265

Patent

active

055808034

ABSTRACT:
A production method for ion-implanted MESFET having self-aligned LDD structure and T-type gate, that the reverse mesa portion is formed at a predetermined part of the channel region which the source and drain regions are formed at both side by using caps layer, the ion is injected between the source and drain regions and the channel region as the small energy and low concentration by using the reverse mesa as the mask, the source and drain regions of the low concentration is formed so that drain part has more broadly than source part, and the gate electrode and the source and drain regions of the low concentration are not contacted at the formed groove which is removed the surface of the reverse mesa portion or the reverse mesa portion.

REFERENCES:
patent: 4782031 (1988-11-01), Hagio et al.
patent: 4889827 (1989-12-01), Willer
patent: 5182218 (1993-01-01), Fujihara
patent: 5185278 (1993-02-01), Barker
patent: 5296398 (1994-03-01), Noda
patent: 5496779 (1996-03-01), Lee et al.
Hagio, et al.: "A New Self-Align Technology For Low Noise GaAs Mesfet's-Sidewall-Assisted Pattern Inversion Technology-"; pp. 194-197; IEDM 1984.
Nakajima, et al.: "Manufacturability of Dummy-Gate Self-Aligned LDD GaAs Mesfets For High Volume Production"; pp. 119-122; GaAs IC Symposium, 1994.
Yamane, et al.: "0.1um GaAs Mesefet's Fabricated Using Ion-Implantation And Photo-Lithography"; pp. 185-188, GaAs IC Symposium 1993.

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