Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-07-24
2007-07-24
Lebentritt, Michael (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S239000, C438S381000, C438S622000, C438S623000, C257SE21011, C257SE21012, C257SE21013
Reexamination Certificate
active
10534492
ABSTRACT:
A method of manufacturing electric double layer capacitors is disclosed. The method assumes a model in which solute is dissolved in solvent before preparing electrolyte, and estimates a withstanding voltage through a simulation. The electrolyte, of which withstanding voltage is expected to exceed a target value, is selectively prepared. The method adjusts respective surface areas of the positive electrode and the negative electrode of the capacitor for making full use of the withstanding voltage of the electrolyte. According to this method, a time for developing electrolyte can be substantially shortened, and an electric double layer capacitor having a high withstanding voltage can be efficiently developed.
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Ishii Kiyohiro
Maeshima Hiroyuki
Moriwake Hiroki
Lebentritt Michael
Lee Kyoung
McDermott Will & Emery LLP
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