Production method for bonded substrates

Metal fusion bonding – Process – With subsequent treating other than heating of bonded parts...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S455000

Reexamination Certificate

active

06959854

ABSTRACT:
There is provided a method for producing a bonded substrate comprising, at least, a process of joining two substrates and a process of subjecting the joined substrates to heat treatment to bond them firmly, wherein, at least, a process of cleaning for removing contaminants on the surface of the substrates is performed before joining the substrates, and then a process of drying the cleaned surface of the substrates is performed without using the water displacing method for the drying process, so that moisture is left on the substrates before joining to increase a joining strength after joining the substrates. Thereby, there can be provided a method for producing a bonded substrate wherein a joining strength of the joining interface of the substrates to be joined is improved, and thus the bonded substrate wherein there is no void failure and blister failure in the bonding interface of a bonded substrate after bonding heat treatment can be produced at high productivity and high yield.

REFERENCES:
patent: 4052524 (1977-10-01), Harakas et al.
patent: 6033764 (2000-03-01), Balents et al.
patent: 6156624 (2000-12-01), Yamagata et al.
patent: 6180496 (2001-01-01), Farrens et al.
patent: 6214472 (2001-04-01), Barton et al.
patent: 6270202 (2001-08-01), Namba et al.
patent: 6410436 (2002-06-01), Yamagata et al.
patent: 2002/0192422 (2002-12-01), Conzone et al.
patent: 0823607 (1998-02-01), None
patent: 0971396 (2000-01-01), None
patent: 03-097215 (1991-04-01), None
patent: 07-058303 (1995-03-01), None
patent: 09-186127 (1997-07-01), None
Koyoshi Mitani et al., “Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding”, Japanese Journal of Applied Physics, vol. 30, No. 4, Apr. 1991, pp. 615-622.
Takao Abe, “A Silicon Crystal Growth and Wafer Processing”, Baifukan, 1994, p. 330.
Surface Science Technology Series 4, Science of SOI, Realize Corporation, 2000, p. 300.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production method for bonded substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production method for bonded substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method for bonded substrates will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3468841

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.