Production method for a discrete structure substrate

Details Production method for a discrete structure substrate Production method for a discrete structure substrate

1998-07-13

2000-07-25

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438918, 438923, 438977, H01L 21302

Patent

active

060936487

ABSTRACT:
The problem to be solved by the present invention is providing a production method capable of adjusting a dislocation density freely to a required dislocation density level for a discrete structure substrate. According to the present invention, when producing a discrete structure substrate generally said to have a low level dislocation density in which an average dislocation density is 5000 pieces/cm.sup.2, diffusing a wafer after determining its thickness so as to meet required dislocation density level, a wafer thickness is adjusted within a specified range before diffusion is carried out.

REFERENCES:
patent: 4514748 (1985-04-01), Beab et al.
patent: 5114876 (1992-05-01), Weiner
patent: 5472909 (1995-12-01), Akatsuka et al.
patent: 5933751 (1999-08-01), Hirota
Patent Abstracts of JP 8-097164, vol. 096, No. 008, Aug. 30, 1996.
Patent Abstracts of JP 3-283532, vol. 016, No. 108, Mar. 17, 1992.

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