Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-04-09
1994-12-06
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 13, 372 45, 372 46, H01L 3300
Patent
active
053713796
ABSTRACT:
A method and instrument are provided for producing compound semiconductor crystallized ultrafine particles of Group II-VI or Groups III-V making use of a vapor phase reaction of an element of Group II or III with an element of Group IV or V. Also disclosed is a gain modulation type quantum box laser element of high performance constructed by geometrically disposing the ultrafine particles.
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patent: 4783427 (1988-11-01), Reed et al.
patent: 4857971 (1989-08-01), Burnham
patent: 5079186 (1992-01-01), Narusawa
patent: 5229170 (1993-07-01), Narusawa
Bowers Courtney A.
Jackson Jerome
Matsushita Electric - Industrial Co., Ltd.
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