Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2005-04-05
2005-04-05
Norton, Nadine G. (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S204000, C117S223000, C117S940000
Reexamination Certificate
active
06875275
ABSTRACT:
A production apparatus for producing a crystal includes a crucible divided into a plurality of stages, each stage containing a crystal precursor material, and a heater arranged to heat the crucible. The crucible has formed therein a degassing hole in a side wall portion thereof for discharging an impurity gas produced when refining the crystal precursor material by adding a scavenger thereto, and a lower portion of a first stage of the plurality of stages is positioned to cover an upper edge of a wall portion of a second stage of the plurality of stages. The overall height of the plurality of stages is 10 mm to 50 mm, the degassing hole has a diameter of 1 mm to 5 mm, and a fluoride crystal is formed from the crystal precursor material.
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V.N. Cheredov, “Contaminant Color Centers in Synthetic Crystals of Calcium Fluoride”, Inorganic Material, vol. 28, No. 3. 1992 (Russian Pulication).*
V.N. Cheredov, “Contaminant Color Centers In Synthetic Crystals of Calcium Fluoride”, Inorganic Material, vol. 28, No. 3, 1992 (Russian/Publications); no English translation available.
Anderson Matthew
Norton Nadine G.
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