Product wafer junction leakage measurement using light and eddy

Details Product wafer junction leakage measurement using light and eddy Product wafer junction leakage measurement using light and eddy

1997-07-30

2000-06-06

Ballato, Josie

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 31302

Patent

active

060723203

ABSTRACT:
A method for measuring junction leakage in a semiconductor product wafer while applying varying light to the wafer. A surface photovoltage characteristic for the wafer and an eddy current characteristic for the wafer in response to the light are measured. A junction leakage characteristic for at least one of junction types is determined by simultaneously measuring the surface photovoltage and the induced eddy current characteristics in response to a light flash.

REFERENCES:
patent: Re29918 (1979-02-01), Verkuil
patent: 4812756 (1989-03-01), Curtis et al.
patent: 4980639 (1990-12-01), Yoshizawa et al.
"A Contactless Method for High-Sensitivity Meaurement of p-n Junction Leakage," IBM J. Res. Develop., vol. 24, No. 3, May 1980.
"A Novel Contactless Method fro Measuring Collector-Isolation P-N Junction Capacitance in LSI Wafers," Electrochemical Society Paper, R.L. Verkuil, 1981, (6 pgs), (unavailable month).

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