Product wafer junction leakage measurement using corona and a ke

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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Details

324766, 3241581, 324767, G01R 3126, G01R 104

Patent

active

061042064

ABSTRACT:
Corona charge is applied to a semiconductor product wafer to reverse bias PN junctions. Measurements of voltage decay in the dark and in the light are made and combined to determine a PN junction leakage characteristic. A portion of the dark measurement is taken in the light to permit normalizing the light and dark measurements.

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