Product made by method of entraining dislocations and other crys

Details Product made by method of entraining dislocations and other crys Product made by method of entraining dislocations and other crys

1984-06-04

1985-12-31

Lacey, David L.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428446, 148 315, B32B 3300

Patent

active

045621063

ABSTRACT:
A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.

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patent: 4211821 (1980-07-01), Hadni
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4332879 (1982-06-01), Pastor et al.
patent: 4333792 (1982-06-01), Smith
M. Geiss et al., Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization, Appl. Phys. Lett. 32(1), Jul. 1, 1979, pp. 71-74.
J. P. Colinge et al., Use of Selective Annealing for Growing Very Large Grain Silicon on Insulator Films, Appl. Phys. Lett. 41(4), Aug. 15, 1982, pp. 346, 347.
J. P. Colinge et al., Selective Annealing of Silicon on Insulator Films, Abstract No. 147, CNET-BD 42, F-38240 Meylan France, pp. 238, 239.

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