Product for making isolated semiconductor structure

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29578, 29580, 148187, H01L 21461

Patent

active

046303430

ABSTRACT:
An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed over the surface of said grooves (13-1 through 13-6) and said islands and a selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.

REFERENCES:
patent: 3415680 (1968-12-01), Perri et al.
patent: 3542572 (1970-11-01), Dalton et al.
patent: 3793068 (1974-02-01), Pammer
patent: 4281448 (1981-08-01), Barry et al.
patent: 4284659 (1981-08-01), Jaccodine et al.
patent: 4417914 (1983-11-01), Lehrer
patent: 4455325 (1984-06-01), Razouk
Li et al., IBM TDB, vol. 19, No. 11, Apr. 1977.
Gardiner et al., IBM Technical Disclosure Bulletin, "Fabricating Monolithic Circuits", vol. 10, No. 5, Oct. 1967, pp. 655 and 666.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Product for making isolated semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Product for making isolated semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Product for making isolated semiconductor structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-164417

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.