Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor
Patent
1991-01-31
1992-08-25
Beck, Shrive
Adhesive bonding and miscellaneous chemical manufacture
Methods
Surface bonding and/or assembly therefor
427217, 4273763, 4273833, 4274192, 4274432, 264212, 501 95, 501 96, C04B 3336, B05D 302
Patent
active
051415798
ABSTRACT:
An SiC whisker-reinforced Si.sub.3 N.sub.4 composite material comprising a sintered body of an Si.sub.3 N.sub.4 matrix having dispersed therein SiC whiskers, wherein said SiC whiskers are uniaxially orientated; a process for producing an SiC whisker-reinforced Si.sub.3 N.sub.4 composite material which comprises mixing (1) SiC whiskers having a coating comprising an oxide of at least one metallic element selected from the group consisting of Be, Mg, Ca, Sr, and Ba of the group 2A; Sc, Y, and La of the group 3A; Ti, Zr, and Hf of the group 4A; and Li, Al, and Si with (2) Si.sub.3 N.sub.4 powder, and sintering the mixture; and a process for forming said metal oxide coating on the surface of whiskers which comprises dipping whiskers in a solution of an inorganic or organic salt of at least one metallic element selected from the group consisting of the elements of the groups 2A, 3A, and 4A of the periodic table, Li, and Al and heat treating the whiskers having adhered thereto the metallic salt at a temperature not less than the thermal decomposition temperature of said metallic salt. The SiC whisker-reinforced Si.sub. 3 N.sub.4 composite material exhibits improved strength particularly at high temperatures and improved toughness.
REFERENCES:
patent: 4994418 (1991-02-01), Yamakawa et al.
Periodic Table at the Elements-from CRC Handbook of Chemistry and Physics-CRC Press 63rd ed.
Journal of Materials Science Letters, vol. 6, no. 11, pp. 1356-1358, "SiC whisker reinforced Si.sub.3 N.sub.4 composites".
Chemical Abstracts, vol. 112, no. 2, abstract no. 11027w.
Komura Osamu
Matsui Tatsuji
Miyake Masaya
Beck Shrive
Sumitomo Electric Industries Ltd.
Utech Benjamin L.
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