Producing method of CMOS image sensor

Details Producing method of CMOS image sensor Producing method of CMOS image sensor

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S197000, C438S309000, C438S636000, C257S292000

Reexamination Certificate

active

06884651

ABSTRACT:
A CMOS image sensor is made such that an oxide film, a nitride film, an oxide film, and a nitride film constituting an antireflection film are stacked over the surface of a photodiode, and the oxide film and the nitride film are anisotropically etched, to thereby form sidewalls at both sides of a gate electrode constituting an N type MOS transistor.

REFERENCES:
patent: 6060765 (2000-05-01), Maeda
patent: 6071826 (2000-06-01), Cho et al.
patent: 6287886 (2001-09-01), Pan
patent: 6303406 (2001-10-01), Chen et al.
patent: 6380568 (2002-04-01), Lee et al.
patent: 6635912 (2003-10-01), Ohkubo
patent: 20020027239 (2002-03-01), Ohkubo
patent: 2002-83949 (2002-03-01), None

Affiliated with

Also associated with

Rating

Producing method of CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Producing method of CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Producing method of CMOS image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3436222