Producing method for solid-state image pickup device...

Details Producing method for solid-state image pickup device... Producing method for solid-state image pickup device...

2007-08-21

2007-08-21

Le, Que T (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC

Reexamination Certificate

active

11368511

ABSTRACT:
The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a producing method for a solid-state image pickup device including pixels100each including a photoelectric conversion region101for generating photoelectrically a carrier and accumulating the carrier photoelectrically generated, a carrier accumulating portion102for accumulating a carrier overflowing from the photoelectric conversion region101in a period of carrier generation and accumulation thereof, and a MOS transistor Tx-MOS for transferring the carrier overflowing from the photoelectric conversion region101, wherein a gate electrode of the MOS transistor Tx-MOS is formed in the same step as the step of forming a polysilicon film118constituting the first electroconductive film of the carrier accumulating portion102.

REFERENCES:
patent: 4977312 (1990-12-01), Juen

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