Producing ion beams suitable for ion implantation and improved i

Details Producing ion beams suitable for ion implantation and improved i Producing ion beams suitable for ion implantation and improved i

1995-03-10

1996-09-10

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

31511141, H01J 37317

Patent

active

055548539

ABSTRACT:
A scheme for producing ions of a selected ion species and a selected ion energy comprising: an ion plasma source for generating an ion source plasma from a selected source gas and having an ion exit aperture; an extraction electrode for extracting and for accelerating ions from the exit aperture of the plasma source, the extraction electrode being positioned in the vicinity of the ion exit aperture of the ion plasma source, the ion source being biased at a potential relative to the extraction electrode to achieve a selected ion beam energy; a magnetic structure having pole faces that define a magnetic deflection gap therebetween and having an ion exit region where ions exit the magnetic deflection gap, the ion plasma source and the extraction electrode being positioned in the magnetic deflection gap so that when the magnetic structure is energized ions extracted from the plasma source corresponding to the selected species are deflected about an angular beam path trajectory of at least ninety degrees before extracted ions reach the ion exit region and exit the magnetic deflection gap. An improved scheme for implanting ions produced by the above-mentioned scheme is also disclosed.

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