Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-07-06
1978-08-15
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29569R, 29574, 148 335, 331107G, 357 13, 357 15, 357 89, 357 90, H01L 21205, H01L 29207, H01L 2948
Patent
active
041069595
ABSTRACT:
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
REFERENCES:
patent: 3668555 (1972-06-01), Kasperkovitz
patent: 3721583 (1973-03-01), Blakeslee
patent: 3808555 (1974-04-01), Goedbloed
patent: 3836990 (1974-09-01), Harth
patent: 3885061 (1975-05-01), Corboy et al.
patent: 3896473 (1975-07-01), DiLorenzo et al.
patent: 3896479 (1975-07-01), DiLorenzo et al.
patent: 3904449 (1975-09-01), DiLorenzo et al.
Salmer et al., "Theoretical and Experimental--GaAs IMPATT--Efficiency" J. Appl. Physics, vol. 44, No. 1, Jan. 1973, pp. 314-324.
DiLorenzo James Vincent
Niehaus William Charles
Varnerin, Jr. Lawrence John
Bell Telephone Laboratories Incorporated
Dean R.
Saba W. G.
Wilde Peter V. D.
LandOfFree
Producing high efficiency gallium arsenide IMPATT diodes utilizi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Producing high efficiency gallium arsenide IMPATT diodes utilizi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Producing high efficiency gallium arsenide IMPATT diodes utilizi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1432574