Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1980-12-30
1982-04-20
Vertiz, O. R.
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
501 88, C01B 3136, C04B 3556
Patent
active
043259308
ABSTRACT:
The method for producing a silicon carbide structure comprises the stages of immersing the carbon structure into a bath containing 20 to 40% by weight of silicon powder in suspension in a liquid medium containing 10 to 30% by weight of fugitive resin, the remainder being constituted by a resin solvent, and of drying the structure in order to obtain an easy-to-handle carbon structure coated with resin and silicon powder bonded in the resin. The structure is then subjected to a heat treatment to let the silicon react with the carbon and produce a silicon carbide structure.
REFERENCES:
patent: 3462340 (1969-08-01), Hough
patent: 3927181 (1975-12-01), Niimi et al.
patent: 4120731 (1978-10-01), Hillig et al.
patent: 4141948 (1979-02-01), Laskow et al.
patent: 4150998 (1979-04-01), Mrelock
patent: 4162301 (1979-07-01), Hamling
patent: 4238434 (1980-12-01), Enomoto et al.
Bell Mark
Societe Europeenne de Propulsion
Vertiz O. R.
LandOfFree
Producing a silicon carbide structure and multidirectional silic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Producing a silicon carbide structure and multidirectional silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Producing a silicon carbide structure and multidirectional silic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1263268