Producing a compound semiconductor device on an oxygen implanted

Details Producing a compound semiconductor device on an oxygen implanted Producing a compound semiconductor device on an oxygen implanted

1988-07-28

1989-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437126, 437132, H01L 2120, H01L 21265, H01L 2136, H01L 21425

Patent

active

048450448

ABSTRACT:
A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.

REFERENCES:
patent: 4509990 (1985-04-01), Vasudev
patent: 4774205 (1988-09-01), Choi et al.

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