Processing techniques for achieving production-worthy, low diele

Details Processing techniques for achieving production-worthy, low diele Processing techniques for achieving production-worthy, low diele

1994-12-21

1996-08-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257751, 257752, 257759, 257763, H01L 2348, H01L 2352, H01L 2940

Patent

active

055504051

ABSTRACT:
The interconnects in a semiconductor device contacting metal lines comprise a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof. A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist comprises a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.

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No Author, "Multilevel Interconnection Structure," IBM Technical Disclosure Bulletin, vol. 34, No. 9, Feb. 1992, p. 220.

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