Processing technique to improve the turn-off gain of a...

Semiconductor device manufacturing: process – Making regenerative-type switching device – Altering electrical characteristic

Reexamination Certificate

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C257SE21388, C257SE21054, C257SE21066

Reexamination Certificate

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07851274

ABSTRACT:
A structure and method for a silicon carbide (SiC) gate turn-off (GTO) thyristor device operable to provide an increased turn-off gain comprises a cathode region, a drift region having an upper portion and a lower portion, wherein the drift region overlies the cathode region, a gate region overlying the drift region, an anode region overlying the gate, and at least one ohmic contact positioned on each of the gate region, anode region, and cathode region, wherein the upper portion of the drift region, the gate region, and the anode region have a free carrier lifetime and mobility lower than a comparable SiC GTO thyristor for providing the device with an increased turn-off gain, wherein the free carrier lifetime is approximately 10 nanoseconds. The reduced free carrier lifetime and mobility are affected by altering the growth conditions, such as temperature under which epitaxy occurs.

REFERENCES:
patent: 5491351 (1996-02-01), Bauer et al.
patent: 5539217 (1996-07-01), Edmond et al.
patent: 5703383 (1997-12-01), Nakayama
patent: 5814546 (1998-09-01), Hermansson
patent: 5831289 (1998-11-01), Agarwal
patent: 6002143 (1999-12-01), Terasawa
patent: 6259134 (2001-07-01), Amartunga et al.
patent: 6350321 (2002-02-01), Chan et al.
patent: 6501099 (2002-12-01), Shah
patent: 6703642 (2004-03-01), Shah
patent: 6734462 (2004-05-01), Shah
patent: 6900477 (2005-05-01), Shah
patent: 7427326 (2008-09-01), Sumakeris et al.
patent: 2002/0070412 (2002-06-01), Mitlehner et al.
patent: 2007/0170436 (2007-07-01), Sugawara
patent: 2007/0210316 (2007-09-01), Yonezawa et al.
patent: 2009/0072242 (2009-03-01), Zhang
Fujihira et al., “Characteristics of 4H-SiC MOS interface annealed in N2O”, Solid-State Electronics, vol. 49, Issue 6, Jun. 2005 pp. 896-901.
Veneroni et al., “Horizontal Hot Wall Reactor Design fo Epi-SiC Growth”, Cryst. Res. Technol., 40, No. 10-11, pp. 972-975 Sep. 2005.
Danielsson et al. “Epitaxial Growth of SiC”, Annual Report 1998, pp. 1-19.
Codreanu et al. Free Carrier Lifetime Reduction in Silicon by Electron-Beam Irradiation, IEEE, 2000 pp. 255-258.
Kordina et al., High quality 4H-SiC epitaxial layers grown by chemical vapor deposition, Appl. Phs. Lett., Mar. 13, 1995, American Institute of Physics, vol. 66, No. 11, pp. 1373-1375.
Tsuchida et al., Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor, Mat. Res. Soc. Symp., 2001, Materials Research Society, vol. 640, H2.12.1-H5.12.6.
Tsuchida et al., Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor, Mat. Res. Soc. Symp., Nov. 27-29, 2000, Materials Research Society, vol. 640, H2.12.1-H5.12.6.
Agarwal, et al., 700-V Asymmetrical 4H-SiC Gate Turn-Off Thyristors (GTO's), IEEE Electron Device Letters, 1997, 18(11), 518-520.
Cao, et al., Characterization of 4H-SiC Gate Turn-off Thyristor, Solid-State Electronics, 2000, 44, 347-352.
Li, et al., High Current Density 800-V 41-1-SiC Gate Turn-off Thyristors, IEEE Electron Device Letters, 1999, 20(5), 219-222.
Agarwal, et al., Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor, Semiconductor Science and Technology, 2001, 16, 260-262.
Shah, Silicon Carbide Distributed Buffer Gate Turn-off Thyristor Structure for Blocking High Voltages, Electronic Letters, 2000, 36(25), 2108-2109.
Azuma, et al., GTO Thyristors, Proceedings of the IEEE, 1988, 76(4), 419-427.
Shah, et al., In-depth analysis of SiC GTO thyristor performance using numerical simulations, Solid-State Electronics, 2000, 44, 353-358.
Siergiej, et al., Advances in SiC materials and devices: an industrial point of view, Materials Science & Engineering B., 1999, 61-62, 9-17.
Shah, 4H-silicon carbide modified-anode gate turn-off thyristor, Electronics Letters, 2000, 36(7), 671-672.
Shah, et al., Advanced Operational Techniques and pn-pn-pn Structures for High-Power Silicon Carbide Gate Turn-off Thyristors, Sensors, and Electron Devices Directorate, U.S. Army Research laboratory, AMSRL-SE-RL, Adelphi, MD, 1232-1236.
Xie, et al., A High-Current and High-Temperature 6H-SiC Thyristor, IEEE Electron Device Letters, 1996, 17(3), 142-144.
Shah, et al., Two-dimensional numerical investigation of the impact of material-parameter uncertainty on the steady-state performance of passivated 4H-SiC thyristors, Journal of Applied Physics, 1998, 84(8), 4625-4630.
Casady, et al., 4H-SiC Power Devices For Use In Power Electronic Motor Control, Solid-State Electronics, 1998, 42(12), 2165-2176.

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