Processing system for semiconductor device manufacture of otherw

Coating apparatus – Gas or vapor deposition – Multizone chamber

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378 34, 118715, 118722, C23C 1600, G21K 500

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058715878

ABSTRACT:
A processing system includes a processing chamber, a circulating device for purifying an inside ambience gas of the processing chamber and for circulating the purified gas back into the processing chamber, a measuring device for measuring the purity of the ambience gas, and an adjusting device for adjusting the purification capacity of the purifying device in accordance with an output of the measuring device. In another form, a processing system includes a first processing chamber in which a first process is to be performed therein, a second processing chamber in which a second process is to be performed therein, and a device for introducing an ambience gas, having been used in said first processing chamber for the first process, into the second chamber for reuse thereof. The gas subsequently used in the second chamber is introduced back into the first chamber for reuse of the gas. At least a portion of the circulated gas is purified to improve its purity. A purity sensor detects the purity of gas discharged from the second chamber and, in accordance with the detection, the capacity of gas purification is adjusted.

REFERENCES:
patent: 5353323 (1994-10-01), Hirokawa
Patent Abstracts of Japan, vol. 15, No. 416 (M-1172), Oct. 23, 1991.
Patent Abstracts of Japan, vol. 011, No. 263 (M-619) Aug. 26, 1987.
Patent Abstracts of Japan, vol. 010, No. 273 (M-518) Sep. 17, 1986.
Patent Abstracts of Japan, vol. 12, No. 149 (M-694), May 10, 1988.

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