Processing substrates with a photon-enhanced neutral beam

Details Processing substrates with a photon-enhanced neutral beam Processing substrates with a photon-enhanced neutral beam

1995-02-17

1997-06-10

Tung, T.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 66, H01L 2100

Patent

active

056371888

ABSTRACT:
An apparatus for processing substrates, the apparatus including a plurality of molecular dissociation furnaces. Each dissociation furnace produces a directed beam of neutral dissociated reactive species. Each reactive beam is directed at a surface of the semiconductor substrate. A photon source is also directed at the surface of the semiconductor substrate. The intensity and wavelength of the photon source are selected to enhance the reaction rate over that of the reactive beam acting alone on the surface.

REFERENCES:
patent: 4662977 (1987-05-01), Motley et al.
patent: 4780608 (1988-10-01), Cross et al.
patent: 4901667 (1990-02-01), Suzuki et al.
patent: 4920094 (1990-04-01), Nogawa et al.
patent: 5009743 (1991-04-01), Swann
patent: 5188671 (1993-02-01), Zinck et al.
patent: 5217559 (1993-06-01), Moslehi et al.
patent: 5284544 (1994-02-01), Mizutani et al.
"New Molecular-dissociation furnace for H and O atom sources" by Bert Van Zyl and M.W. Gealy, Nov. 10, 1985, Review of Scientific Instruments 57 (3) .

Affiliated with

Also associated with

Rating

Processing substrates with a photon-enhanced neutral beam does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Processing substrates with a photon-enhanced neutral beam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processing substrates with a photon-enhanced neutral beam will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-762275