Processing silicon wafers employing processing gas atmospheres o

Details Processing silicon wafers employing processing gas atmospheres o Processing silicon wafers employing processing gas atmospheres o

1981-10-27

1983-03-15

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 427 95, H01L 21316

Patent

active

043767966

ABSTRACT:
At atmosphere X and an atmosphere Y, which may be an oxidizing atmosphere, are used in a process wherein silicon wafers are processed in a processing chamber, which is pressurized sequentially with a purging atmosphere, with the atmosphere X, and with the atmosphere Y displacing the atmosphere X excpet for a residual portion remaining with the atmosphere X and diminishing in concentration with time. As the atmosphere X has a molecular weight approximating the molecular weight of the atmosphere Y, stratification is minimized. If the atmosphere Y is steam, the atmosphere X may be a premixture of helium and oxyen.

REFERENCES:
patent: 2820760 (1957-08-01), Derick
patent: 3243314 (1966-03-01), Lehman
patent: 3426422 (1969-02-01), Deal
patent: 3518115 (1970-06-01), Pammer
patent: 3594227 (1971-07-01), Oswald
patent: 3647535 (1972-03-01), Naber
patent: 3692571 (1972-09-01), Colton
patent: 3903325 (1975-09-01), Horiuchi
patent: 4018184 (1977-04-01), Nagasawa
patent: 4139658 (1979-02-01), Cohen
patent: 4154192 (1979-05-01), Tsubouchi
patent: 4167915 (1979-09-01), Toole
patent: 4214919 (1980-07-01), Young
patent: 4253417 (1981-03-01), Valentijn
patent: 4268538 (1981-05-01), Toole
patent: 4275094 (1981-06-01), Takagi
patent: 4293589 (1981-10-01), Takagi
patent: 4293590 (1981-10-01), Takagi
Zeto et al., "Pressure Oxidation of Silicon: An Emerging Technology", Solid State Technology, Jul. 1979, pp. 62-69.
Ga Sonics Products Specifications, 5624-3/11/78, 3k, "High Pressure Oxidation System", Mar. 1978,
Tsybouchi et al., "Oxidation of Silicon in High Pressure Steam", Japan J. App. Phys., vol. 16, No. 5, 1977, pp. 855-856.
Irene, "Method to Reduce Defects in Very Thin SiO.sub.2 Films", IBM TDB, vol. 21, No. 1, Jun. 1978, pp. 393-394.

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