Processing of Sb-based lasers

Details Processing of Sb-based lasers Processing of Sb-based lasers

1997-06-06

1998-09-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

438 46, 438 47, 257 76, H01L 2120

Patent

active

058077650

ABSTRACT:
A method for passivating a III-V semiconductor surface with Al.sub.2 O.sub.3 is disclosed. Sb-based semiconductor lasers may be etched with a solution of HCl:HNO.sub.3 :H.sub.2 O for a more uniform surface.

REFERENCES:
patent: 5726462 (1998-03-01), Spahn et al.
Choi et al., GaInAsSb-AiGaAsSb Tapered Lasers Emitting at 2 um, Oct., 1993, IEEE Photonics Technology Letters, vol. 5, No. 10, pp. 1117-1119.
Choi et al., High-power multiple-quantum-well GaInAsSb/ALGaAsSb diode lasers emitting at 2.1 um with low threshold current density, Sep., 1992, Appl. Phys. Lett. 61 (10), pp. 1154-1156.
Eglash et al., Efficient GaInAsSb/AIGaAsSb diode lasers emitting at 2.29 um, Sep. 24, 1990, Appl Phys. Lett. 57(13), pp. 1292-1294.
Choi et al., Double-heterostructure diode lasers emitting at 3 um with a metastable GaInAsSb active layer and AIGaAsSb cladding layers, May 9, 1994, Appl. Phys. Lett 64(19), pp. 2474-2476.
Choi et al., 3.9um in AsSb/AIAsSb double-heterostrructure diode lasers with high output power and improved temperature characteristics, Oct. 31, 1994, Appl. Phys. Lett. 65(18), pp. 2251-2253.
Kurtz et al., Pseudomorphic In AsSb multiple quantum well injection laser emitting at 3.5um, Mar. 4, 1996, Appl. Phys. Lett. 68(10), pp. 1332-1334.
Poppy et al., High power In AsSb/InAsSbP double heterostructure laser for continous wave operation at 3.6 um, May 13, 1996, Appl Phys. Lett. 68(20), pp. 2790-2792.
Kurtz et al., Midwave (4um) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions, Feb. 14, 1994, Appl. Phys. Lett. 64(7), pp. 812-814.
C. Deshpandey et al., "Evaporation Processes", in Thin Film Processes II, edited by Vossen et al., Academic Press, pp. 112-129 (no month given), 1991.

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