Processing methods for high-dielectric-constant materials

Details Processing methods for high-dielectric-constant materials Processing methods for high-dielectric-constant materials

1995-06-06

1997-03-11

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427404, 4274192, 4274193, 134 1, 216101, B05D 306

Patent

active

056099274

ABSTRACT:
Processing techniques for processing high-dielectric-constant material are provided to allow for the formation of an electronic device (10) which comprises a inner electrode (24), a high-dielectric-constant layer (28), and an outer electrode (30). High-dielectric-constant layer (28) is subjected to ultraviolet radiation in an oxygen ozone ambient to eliminate various undesirable hydroxide and carbonate compounds. Layer (28) is further subjected to high pressure isotropic reactive ion etches prior to the deposition of layer (30). The interface between layer (28) and layer (30) is exposed to reactive fluorine and low pressure plasma to improve the fair electric properties and leakage currents associated with layer (28).

REFERENCES:
patent: 5039376 (1991-08-01), Zukotynski et al.
patent: 5048163 (1991-09-01), Asmus et al.

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