Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-07-01
2010-06-01
Tsai, H. Jey (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S662000, C438S949000
Reexamination Certificate
active
07727853
ABSTRACT:
A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
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Ikegami Hiroshi
Ito Shin'ichi
Kawano Kenji
Takahashi Riichiro
Takeishi Tomoyuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Tsai H. Jey
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