Cleaning and liquid contact with solids – Processes – Using solid work treating agents
Patent
1990-01-25
1991-07-30
Chaudhuri, Olik
Cleaning and liquid contact with solids
Processes
Using solid work treating agents
437 10, B08B 702, H01L 21304
Patent
active
050357506
ABSTRACT:
A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include nuclei of particles such as silica powder.
REFERENCES:
patent: 2699403 (1955-01-01), Courts
patent: 3162019 (1964-12-01), Porter et al.
patent: 4073158 (1978-02-01), Guiller
patent: 4389820 (1983-06-01), Fong et al.
patent: 4402193 (1983-09-01), McFee
patent: 4631250 (1986-12-01), Hayashi
patent: 4655847 (1987-04-01), Ichinoseki et al.
patent: 4731125 (1988-03-01), Carr
patent: 4748817 (1988-06-01), Oura
patent: 4806171 (1989-02-01), Whitlock et al.
patent: 4820650 (1989-04-01), Nagae
"VLSI Fabrication Principles", Sorab U. Ghandi, Wiley-Interscience, 1983, pp. 587-589.
Fukumoto Takaaki
Hata Takeki
Ohmori Toshiaki
Tada Masuo
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
Ojan Ourmazd S.
Taiyo Sanso Co. Ltd.
LandOfFree
Processing method for semiconductor wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Processing method for semiconductor wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processing method for semiconductor wafers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1540877