Processing method for recovering a damaged low-k film of a...

Details Processing method for recovering a damaged low-k film of a... Processing method for recovering a damaged low-k film of a...

2010-06-01

2011-11-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Repair or restoration

C438S935000

Reexamination Certificate

active

08048687

ABSTRACT:
There is provided a processing method for performing a recovery process on a damaged layer formed on a surface of a low-k film of a target substrate by introducing a processing gas containing a methyl group into a processing chamber. The method includes: increasing an internal pressure of the processing chamber up to a first pressure lower than a processing pressure for the recovery process by introducing a dilution gas into the processing chamber maintained in a depressurized state; then stopping the introduction of the dilution gas, and increasing the internal pressure of the processing chamber up to a second pressure as the processing pressure for the recovery process by introducing the processing gas into a region where the target substrate exists within the processing chamber; and performing the recovery process on the target substrate while the processing pressure is maintained.

REFERENCES:
patent: 6025252 (2000-02-01), Shindo et al.
patent: 2002-083869 (2002-03-01), None
patent: 2006-049798 (2006-02-01), None

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