Processing method for protection of backside of a wafer

Details Processing method for protection of backside of a wafer Processing method for protection of backside of a wafer

2007-07-10

2007-07-10

Wells, Nikita (Department: 2881)

Semiconductor device manufacturing: process

Chemical etching

C438S720000, C438S745000

Reexamination Certificate

active

11107885

ABSTRACT:
A temporal protection layer is employed to a wafer backside for use of micro-electro-mechanical systems (MEMS). The formation of the temporal protection layer prevents the wafer backside from scratch in process of transferring system for IC manufacturers. With regard to low cost and easy forming and removing, an oxide layer is used as the temporal protection layer. The throughput and yield rate of the wafer production are improved by the use of the temporal protection layer.

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