Coating processes – Electrical product produced – Photoelectric
Reexamination Certificate
2011-01-11
2011-01-11
Chen, Bret (Department: 1715)
Coating processes
Electrical product produced
Photoelectric
C427S076000, C427S443200, C427S596000, C136S252000, C136S262000, C136S264000, C136S265000, C438S505000, C438S508000, C438S565000
Reexamination Certificate
active
07867551
ABSTRACT:
A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na.
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Chen Bret
Pillsbury Winthrop Shaw & Pittman LLP
SoloPower, Inc.
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