Processing method

Details Processing method Processing method

2007-11-20

2007-11-20

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000, C438S725000, C216S049000, C216S067000, C216S079000

Reexamination Certificate

active

10490201

ABSTRACT:
A processing method which, when an organic film layer such as a PR film layer202formed on the surface of a wafer W is to be removed from an SiO2film layer204below it by generating plasma of a process gas in a chamber1comprises the step of using O2gas as the process gas to remove the organic film layer at a first pressure, e.g., 20 mTorr, lower than in a conventional case, and the step of using the same O2gas to remove the organic film layer at a second pressure, e.g., 200 mTorr, higher than the first pressure.

REFERENCES:
patent: 6207583 (2001-03-01), Dunne et al.
patent: 6277733 (2001-08-01), Smith
patent: 6325861 (2001-12-01), Stinnett
patent: 6379574 (2002-04-01), Ou-Yang et al.
patent: 6383964 (2002-05-01), Nakahara et al.
patent: 6468898 (2002-10-01), Usami
patent: 6554004 (2003-04-01), Nguyen et al.
patent: 2001/0003271 (2001-06-01), Otsuki
patent: 63-216346 (1988-09-01), None
patent: 11-097421 (1999-04-01), None
patent: 11-97421 (1999-04-01), None
patent: 2001-085411 (2001-03-01), None
patent: 2001-118830 (2001-04-01), None
Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, pp. 639, 651-654.

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