Processing device, processing method and method of...

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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C451S285000, C451S028000

Reexamination Certificate

active

10792396

ABSTRACT:
A CMP apparatus1is constructed comprising a wafer chucking mechanism20which carries and holds a wafer W, a polishing pad4which performs polishing working on the surface of the wafer W that is being worked, and a polishing head2which holds the polishing pad4. The polishing pad4held by the polishing head2performs polishing working on the surface that is being worked on the wafer W while being caused to move in contact with this surface that is being worked on the wafer W, which is carried and held by the wafer chucking mechanism20. This polishing pad4has a rough polishing pad4athat can partially work the surface that is being worked, and intermediate polishing and finishing polishing pads4band4cthat can uniformly work the entire surface of the surface that is being worked. The apparatus is constructed so that working that flattens undulations with indentations and projections in the film thickness of the surface that is being worked is performed by the rough polishing pad4a, and the surface that is being worked is then uniformly worked by the intermediate polishing and finishing polishing pads4band4c. As a result, even in cases where there are undulations with indentations and projections in the initial film thickness of the surface that is being worked, the surface that is being worked can be worked into a flat surface with a desired uniform residual film thickness.

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patent: 6575818 (2003-06-01), Jeong
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patent: 10-303152 (1998-11-01), None
patent: 11-20468 (1999-07-01), None
patent: 11-265860 (1999-09-01), None

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