Processing device, electrode, electrode plate, and...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With gas inlet structure

Reexamination Certificate

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C156S345330, C118S715000

Reexamination Certificate

active

08038835

ABSTRACT:
A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.

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patent: 5975912 (1999-11-01), Hillman et al.
patent: 6159297 (2000-12-01), Herchen et al.
patent: 6287980 (2001-09-01), Hanazaki et al.
patent: 6758941 (2004-07-01), Ookawa et al.
patent: 62-094938 (1987-05-01), None
patent: 06-120177 (1994-04-01), None
patent: WO00/75973 (2000-12-01), None

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