Processing chamber for processing semiconductor substrates

Details Processing chamber for processing semiconductor substrates Processing chamber for processing semiconductor substrates

1993-12-27

1995-07-18

Bueker, Richard

Fishing, trapping, and vermin destroying

437225, 437247, 118715, 118725, 29 2501, 219390, C23C 1600

Patent

active

054340900

ABSTRACT:
A solid metal-gettering material is used between walls of a double-walled processing chamber, such as a furnace tube and an RTP chamber. The solid metal-gettering material getters metal before the metal reaches the substrate within the processing zone of a the processing chamber. Polysilicon pellets and silicon carbide pellets are examples of types of solid metal-getting materials, although other materials may be used. A purge gas may be flow within the gap or the gap may be evacuated while the pellets lie within the gap. Limitations on shapes and sizes of the pellets and purge gas flow rate are determined by the size of the gap.

REFERENCES:
patent: 3193419 (1965-07-01), White
Cohen, et al.; "Silicon Dioxide Thermally Grown in a Silicon Nitride Ambient;" J. Electrochem. Soc.; vol. 4, No. 4, p. 506 (1969).
Paul F. Schmidt; "Contamination-Free High Temperature Treatment of Silicon or Other Materials;" J. Electrochem. Soc.; vol. 130, No. 1, pp. 196-199 (1983).
Wilson, et al.; Mat. Res. Soc. Symp. Proc., vol. 52, pp. 181-191 (1986).

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