Abrasive tool making process – material – or composition – With carbohydrate or reaction product thereof
Patent
1988-04-05
1990-06-12
Olszewski, Robert P.
Abrasive tool making process, material, or composition
With carbohydrate or reaction product thereof
51320, 51321, 51322, 62347, 134 7, B24C 300
Patent
active
049321684
ABSTRACT:
A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.
REFERENCES:
patent: 2699403 (1955-01-01), Courts
patent: 3162019 (1964-12-01), Porter et al.
patent: 4073158 (1978-02-01), Guiller
patent: 4389820 (1983-06-01), Fong et al.
patent: 4402193 (1983-09-01), McFee
patent: 4655847 (1987-04-01), Ichinoseki et al.
patent: 4731125 (1988-03-01), Carr
patent: 4806171 (1989-02-01), Whitlock et al.
Fukumoto Takaaki
Hata Takeki
Ohmori Toshiaki
Tada Masuo
Mitsubishi Denki & Kabushiki Kaisha
Olszewski Robert P.
Tsiyo Sanso Co., Ltd.
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