Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1988-05-18
1989-05-23
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118725, 156643, B44C 122, D05D 306, C03C 1500, C23F 102
Patent
active
048327778
ABSTRACT:
A process module having a heating module with two heating rings and a reflector. The heating rings are separately controlled in order to provide a variety of heating configurations to a wafer. A transparent wall or a conductive substrate is provided between the heating rings and a workpiece which is to be heated.
REFERENCES:
patent: 3439238 (1969-04-01), Williams et al.
patent: 3765763 (1973-10-01), Nygaard
patent: 4250428 (1981-02-01), Oliver et al.
patent: 4293249 (1981-10-01), Whelan
patent: 4306292 (1981-12-01), Head
patent: 4393095 (1983-07-01), Greenberg
patent: 4439243 (1984-03-01), Titus
patent: 4439244 (1984-03-01), Allevato
patent: 4447469 (1984-05-01), Peters
patent: 4465898 (1984-08-01), Orcutt et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4609103 (1986-09-01), Bimer et al.
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4629635 (1986-12-01), Brors
patent: 4632057 (1986-12-01), Price et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4684542 (1987-08-01), Jasinski et al.
Lucovsky et al., "Deposition of Dielectric Films by Remote Plasma Enhanced CVD", Mat. Res. Soc. Symp. Proc., vol. 68, 1986, pp. 323-334.
Sakai et al., "Sealing Concept of Elastic Metal Gasket `Helicoflex`," 32 Vacuum 33 (1982).
Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultra High Vacuum", 26 IEEE Transactions on Nuclear Science 4000 (1979).
Fleming et al., "Develoment of Bakable Seal for Large Non-Circular Ports on the Tokamak Fusion Test Reactor", 17 Journal of Vacuum Science and Technology 337 (1980).
Accomazzo et al., "Ultra-High Efficiency Membrane Filters for Semiconductor Process Gases", Solid State Technology 27(3), pp. 141-146 (1984).
Kasper et al., "A Gas Filtration System for 10.sup.5 Particles/cm.sup.3," Aerosol Science and Technology 5(2), pp. 167-185 (1986).
M. L. Malczewski, J. D. Borkman, and G. T. Vardian, "Measurement of Particulates in Filtered Process Gas Streams", Solid State Technology 29 (4), pp. 151-157 (1986).
C. M. Van Atta, "Vacuum Science and Engineering", McGraw-Hill, New York, p. 31.
R. A. Bowling, "An Analysis of Adhesion on Semiconductor Surfaces", Journal of the Electrochemical Society 132 (99), pp. 2208-2214 (1985).
"Grooves Reduce Aircraft Drag", NASA Tech. Briefs 5 (2), p. 192.
"Mission Accomplished", NASA Tech. Briefs 117 (3), pp. 82-83 (1987).
C. J. Howard, J. Phys. Chem., vol. 83, p. 6 (1979).
H. Schlichting, "Boundary-Layer Theory," 7th Edition, McGraw Hill, New York, (1979).
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for Microelectronic Applications", J. Vac. Sci. Technol. B4 (5), Sep./Oct. 1986, pp. 1159-1167.
S. Nishino, et al., "SiO.sub.2 Deposition by Photo-Initiation", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 209-212.
C. J. Mogab, "Plasma Etching of Si and SiO.sub.2 -The Effect of Oxygen Additions to CF.sub.4 Plasmas", J. Appl. Phys., vol. 49, No. 7, Jul., 1978, pp. 3796-3803.
D. L. Flamm, et al., "Reaction of Flourine Atoms with SiO.sub.2 ", J. Appl. Phys. 50 (10), Oct. 1979, pp. 6211-6213.
D. L. Flamm, et al., "The Reaction of Flourine Atoms with Silicon", J. Appl. Phys. 52 (6), 1981, pp. 3633-3639.
G. Smolinski, et al., "The Plasma Oxidation of CF.sub.4 in a Tubular-Alumina Fast-Flow Reactor", J. Appl. Phys. 50 (7), Jul. 1979, pp. 4982-4987.
J. F. Gibbons, et al., "Limited Reaction Processing: Silicon Epitaxy", Appl. Phys. Lett. 47 (7), Oct. 1, 1985, pp. 721-723.
A. Yamada, et al., "Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200.degree. C.", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220.
K. Tsujimoto, et al., "A New Sidewall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Robert R. Krchnavek, et al., "Photo Deposition Rates of Metal from Metal Alkyls", J. Vac. Sci. Tecnol. B 5 (1), Jan./Feb. 1987, pp. 20-26.
Hiroyuki Yokoyama, "Photo Induced Surface Morphology Improvement and Preferential Orientation Enhancement in Film Deposition of Evaporated ZnS", Appl. Phys. Lett. 49 (20), Nov. 17, 1986, pp. 1354-1356.
J. B. Mullin, et al., "Ultraviolet Assisted Growth of II-VI Compounds", J. Vac. Sci. Technol. A, vol. 4, No. 3, May/Jun. 1986, pp. 700-703.
S. Oda, et al., "Hydrogen Radical Assisted Chemical Vapor Deposition of ZnSe", Appl. Phys. Lett. 48 (1), Jan. 6, 1986, pp. 33-35.
R. A. Levy et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", J. Electrochem. Soc.: Reviews and News, Feb. 1987, pp. 37C-49C.
Carl E. Larson, et al., "Chemical Vapor Deposition of Gold", Aug. 11, 1986, IBM Almaden Research Center, San Jose, CA 91520, p. 266.
Paul A. Robertson, et al., "Photo Enhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp", Fall 1986, Materials Research Society Symposium, Dec., 1986.
J. Praraszczak, et al., "Methods of Creation and Effect of Microwave Plasmas Upon the Etching of Polymers and Silicon", Microelectronic Engineering 3 (1985), pp. 397-410.
C. Arnone; et al., Study of Photo-Induced Thin Film Growth on CdS Substrates, Mat. Res. Soc. Symp. Proc., vol. 29 (1984), pp. 275-281.
Helicoflex Company, Catalog H. 001. 002, Resilient Metal Seals and Gaskets.
P. D. Richard, et al., "Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide for Gate Insulators in (In, Ga) As FET Devices", J. Vac. Sci. Technol. A3 (3), May/Jun. 1985, pp. 867-872.
G. Lucovsky, et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A4 (3), May/Jun. 1986, pp. 681-688.
D. E. Tsu, et al., "Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A4 (3), May/Jun. 1986, pp. 480-485.
Advertisement, "Dry Stripper", Samco/March, Solid State Technology, 30 (3), Mar. 1987, p. 45.
F. Paneth et al., "Paneth's Lead-Mirror Experiment", Ber. Dt. Chem. Ges. B62 1335 (1929).
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", J. Vac. Sci. Technol., 15(6), Nov./Dec. 1978, pp. 1853-1854.
S. Mehta, et al., "Blanket CVD Tungsten Interconnect for VLSI Devices", Jun. 9-10, 1986, V-MIC Conf., pp. 418-435.
M. E. Burba, et al., "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1986, pp. 2113-2118.
S. Iwata et al., "A New Tungsten Gate Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1174-1179.
C-K. Hu, et al., "Reactive Ion Etching of CVD and Sputtered Tungsten Films", IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, N. Y. 10598, two pages.
IBM, "Anisotropic and Selective Etching of Tungsten Silicide-Tungsten-Tungsten-Silicide Composite Stack", IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, p. 1151.
Davis Cecil J.
Matthews Robert T.
Comfort James T.
Powell William A.
Rogers Joseph E.
Sharp Melvin
Texas Instruments Incorporated
LandOfFree
Processing apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Processing apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processing apparatus and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1728591