Processing apparatus and method

Electric heating – Metal heating – By arc

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156345, 21912142, 21912143, 204298, 118709, B23K 900

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active

048914886

ABSTRACT:
A process module wherein radiant heating is combined with the capability for generating a plasma in proximity to the wafer face. It is useful to clamp the slice to a susceptor which is of the same material as the wafer, or at least has essentially the same thermal coefficient of expansion. The susceptor is directly heated by a radiant heater, but the rate of temperature change is slow enough that no large thermal gradients between the susceptor and the wafer develop.

REFERENCES:
patent: 3439238 (1968-04-01), Birchler et al.
patent: 3765763 (1973-10-01), Nygaard
patent: 4250428 (1981-02-01), Oliver et al.
patent: 4253907 (1981-03-01), Parry et al.
patent: 4292384 (1981-09-01), Straughan et al.
patent: 4293249 (1981-10-01), Whelan
patent: 4306292 (1981-12-01), Head, III
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4439243 (1984-03-01), Titus
patent: 4439244 (1984-03-01), Allevato
patent: 4447469 (1984-05-01), Peters
patent: 4465898 (1984-08-01), Orcutt et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4547648 (1985-10-01), Longeway
patent: 4579609 (1986-04-01), Rolf et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4609103 (1986-09-01), Birmer et al.
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4629635 (1986-12-01), Brors
patent: 4632057 (1986-12-01), Price et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4684542 (1987-08-01), Jasinski et al.
"Methods of and Effect of Microwave Plasmas Upon Etching of Polymers and Silicon", Paraszczak et al., Micro Electronic Engineering, 1985.
"Limited Reaction Processing: Silicon Epitaxy", Gibbons et al., Applied Physic, Oct. 1985.
"Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide", Richard et al., J. Vacuum Scientific Technology, 6-1985.
Blanket CVD Tungsten Interconnect for VLSI Devices, Mehta et al., IEEE, 6/1986.
SiO.sub.2 Deposition by Photo-Initiation, Nishino et al., International Conference on Solid State Devices, 1986, pp. 209-212.
Reaction of Florine Atoms with SiO.sub.2, Flamm et al., J. Applied Physics, 10/1979.
Reaction of Florine Atoms with Silicon, Journal of Applied Physics, Flamm et al., vol. 52, 1982.
Photochemical Vapor Deposition of Single-Crystal Silicon of 200.degree. C., Yamada et al., Conference on Solid State Materials, 1986.
An Analysis of Particle Adhesion on Semiconductor Surfaces, Solid State Science and Technology, 9/1985, pp. 2208-2214.
"Plasma Assisted CVD Thin Films for Microelectronic Applications", Nguyen, J. Vac. Sci. Technol., 10/1986.
Kinetic Measurements Using Flow Tubes, Howard, Journal of Physical Chemistry, vol. 83, No. 1, 1979.
Boundary Layer Theory, by Schlichting, Seventh Edition, McGraw-Hill Book Co., copyright 1979.
Low Pressure CVD of Tungsten and Al for VLSI Applications, Levy et al., Electrochemical Society, Feb. 1987.
Ultra High Efficiency Membrane Filters for Semiconductor Gases, Accomazzo et al., Solid State Technology, Mar. 1984.
IEEE Transactions on Nuclear Science, vol. NS-26, No. 3, 6/1979.
Sealing Concept of Elastic Metal Gasket Helicoflex, Sakai et al., Vacuum, vol. 32, No. 1, pp. 33-37.
Measurement of Particulates in Filter Process Gas Stream, Solid State Technolgies, 4/1986.
IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986.
"New Sidewall Protection Technique in Microwave Plasma Etching", Tsujimoto et al., International Conf. on Solid State Devices, 1986, pp. 229-232.
"Hydrogen Radical Assisted CVD of ZnSe", Kawase et al., Applied Physics Letters, vol. 48, No. 11, 1/1986.
Gas Filtration System for Concentrations of 10.sup.-5 Particles, Aerosol Science and Technology, 1986.

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