Etching a substrate: processes – Nongaseous phase etching of substrate – Substrate is multilayered
Reexamination Certificate
2008-09-08
2011-10-25
MacArthur, Sylvia R. (Department: 1716)
Etching a substrate: processes
Nongaseous phase etching of substrate
Substrate is multilayered
C134S001300, C134S113000, C134S036000
Reexamination Certificate
active
08043521
ABSTRACT:
A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the target object, thereby etching the first film, determining whether the first film has been removed or not, switching the first process liquid to a second process liquid differing in a condition from the first process liquid when it has been determined that the first film has been removed, and bringing the second process liquid into contact with the second film, thereby etching the second film.
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Machine Generated English Translation of JP 2004-179583, published Jun. 24, 2004.
Japanese Office Action; Japanese patent Application No. 2004-304471; dated Dec. 8, 2009.
MacArthur Sylvia R.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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