Processing apparatus

Details Processing apparatus Processing apparatus

1988-04-26

1989-05-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156654, B44C 122, B05D 306, C03C 1500

Patent

active

048327794

ABSTRACT:
A rapid thermal processing apparatus and method wherein a transparent (e.g. quartz) vacuum wall is sealed to the process chamber by a radially elastically expandable metallic seal, e.g. a hollow metallic ring with a spring in its core, which has a soft surface portion which deforms inelastically to make a seal.

REFERENCES:
patent: 3439238 (1969-04-01), Williams et al.
patent: 3765763 (1973-10-01), Nygaard
patent: 4250428 (1981-02-01), Oliver et al.
patent: 4293249 (1981-10-01), Whelan
patent: 4306292 (1981-12-01), Head
patent: 4393095 (1983-07-01), Greenberg
patent: 4439243 (1984-03-01), Titus
patent: 4439244 (1984-03-01), Allevato
patent: 4447469 (1984-05-01), Peters
patent: 4465898 (1984-08-01), Orcutt et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4609103 (1986-09-01), Bimer et al.
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4629635 (1986-12-01), Broks
patent: 4632057 (1986-12-01), Price et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4684542 (1987-08-01), Jasinski et al.
Lucovsky et al., "Deposition of Dielectric Films by Remote Plasma Enhanced CVD", vol. 68, 1986, pp. 323-334, Mat. Res. Soc. Symp. Proc.
Sakai et al., "Sealing Concept of Elastic Metal Gasket `Helicoflex`", 32 Vacuum 33, (1982).
Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", 26 IEEE Transactions on Nuclear Science 4000, (1979).
Fleming et al., "Development of Bakable Seals for Large Non-Circular Ports on the Tokamak Fusion Test Reactor", 17 Journal of Vacuum Science and Technology 337, (1980).
Accomazzo et al., "Ultrahigh Efficiency Membrane Filters for Semiconductor Process Gases", Solid State Technology 27(3), pp. 141-146, (1984).
Kasper et al., "A Gas Filtration System for 10.sup.5 Particles/cm.sup.3 ", Aerosol Science and Technology 5(2), pp. 167-185, (1986).
M. L. Malczewski, J. D. Borkman, and G. T. Vardian, "Measurement of Particulates in Filtered Process Gas Streams", Solid State Technology 29 (4), pp. 151-157, (1986).
C. M. Van Atta, "Vacuum Science and Engineering", McGraw-Hill, New York, p. 31.
R. A. Bowling, "An Analysis of Adhesion on Semiconductor Surfaces", Journal of the Electrochemical Society 132 (9), pp. 2208-2214, (1985).
"Grooves Reduce Aircraft Drag", NASA Tech. Briefs 5 (2), p. 192.
"Mission Accomplished", NASA Tech. Briefs 117 (3), pp. 82-83, (1987).
C. J. Howard, J. Phys. Chem., vol. 83, p. 6, (1979).
H. Schlichting, "Boundary-Layer Theory," 7th Edition, McGraw Hill, New York, (1979).
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for Microelectronic Applications", J. Vac. Sci. Technol. B4 (5), Sep./Oct. 1986, pp. 1159-1167.
S. Nishino et al., "SiO.sub.2 Deposition by Photo-Initiation", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 209-212.
C. J. Mogab, "Plasma Etching of Si and SiO.sub.2 --The Effect of Oxygen Additions to CF.sub.4 Plasmas", J. Appl. Phys., vol. 49, No. 7, Jul. 1978, pp. 3796-3803.
D. L. Flamm et al., "Reaction of Flourine Atoms with SiO.sub.2 ", J. Appl. Phys. 50 (10), Oct. 1979, pp. 6211-6213.
D. L. Flamm et al., "The Reaction of Flourine Atoms with Silicon", J. Appl. Phys. 52 (6), 1981, pp. 3633-3639.
G. Smolinski et al., "The Plasma Oxidation of CF.sub.4 in a Tubular-Alumina Fast-Flow Reactor", J. Appl. Phys. 50 (7), Jul. 1979, pp. 4982-4987.
J. F. Gibbons et al., "Limited Reaction Processing: Silicon Epitaxy", Appl. Phys. Lett. 47 (7), Oct. 1, 1985, pp. 721-723.
A. Yamada et al., "Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200.degree. C.", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220.
K. Tsujimoto et al., "A New Sidewall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Robert R. Krchnavek et al., "Photo Deposition Rates of Metal from Metal Alkyls", J. Vac. Sci. Tecnol. B 5 (1), Jan./Feb. 1987, pp. 20-26.
Hiroyuki Yokoyama, "Photo Induced Surface Morphology Improvement and Preferential Orientation Enhancement in Film Deposition of Evaporated ZnS", Appl. Phys. Lett. 49 (20), Nov. 17, 1986, pp. 1354-1356.
J. B. Mullin et al., "Ultraviolet Assisted Growth of II-VI Compounds", J. Vac. Sci. Technol. A, vol. 4, No. 3, May/Jun. 1986, pp. 700-703.
S. Oda et al., "Hydrogen Radical Assisted Chemical Vapor Deposition of ZnSe", Appl. Phys. Lett. 48 (1), Jan. 6, 1986, pp. 33-35.
R. A. Levy et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", J. Electrochem. Soc.: Reviews and News, Feb. 1987, pp. 37C-49C.
Carl E. Larson et al., "Chemical Vapor Deposition of Gold", Aug. 11, 1986, IBM Almaden Research Center, San Jose, CA 91520, p. 266.
Paul A. Robertson et al., "Photo Enhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp", Fall 1986, Materials Research Society Symposium, Dec. 1986.
J. Praraszczak et al., "Methods of Creation and Effect of Microwave Plasmas Upon the Etching of Polymers and Silicon", Microelectronic Engineering 3, (1985), pp. 397-410.
C. Arnone et al., Study of Photo-Induced Thin Film Growth on CdS Substrates, Mat. Res. Soc. Symp. Proc., vol. 29, (1984), pp. 275-281.
Helicoflex Company, Catalog H. 001. 002, Resilient Metal Seals and Gaskets.
P. D. Richard et al., "Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide for Gate Insulators in (In, Ga) As FET Devices", J. Vac. Sci. Technol. A3 (3), May/Jun. 1985, pp. 867-872.
G. Lucovsky et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A4 (3), May/Jun. 1986, pp. 681-688.
D. E. Tsu et al., "Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A4 (3), May/Jun. 1986, pp. 480-485.
Advertisement, "Dry Stripper", Samco/March, Solid State Technology, 30 (3), Mar. 1987, p. 45.
F. Paneth et al., "Paneth's Lead-Mirror Experiment", Ber. Dt. Chem. Ges. B62 1335, (1929).
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", J. Vac. Sci. Technol., 15(6), Nov./Dec. 1978, pp. 1853-1854.
S, Mehta et al., "Blanket CVD Tungsten Interconnect for VLSI Devices", Jun. 9-10, 1986, V-MIC Conf., pp. 418-435.
M. E. Burba et al., "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1986, pp. 2113-2118.
S. Iwata et al., "A New Tungsten Gate Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1174-1179.
C-K. Hu et al., "Reaction Ion Etching of CVD and Sputtered Tungsten Films", IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598, two pages.
IBM, "Anisotropic and Selective Etching of Tungsten Silicide-Tungsten-Silicide Composite Stack", IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, pp. 1151.

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