Processing apparatus

Details Processing apparatus Processing apparatus

1987-07-16

1989-06-06

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 20419212, 118719, 414222, C23C 1334

Patent

active

048369055

ABSTRACT:
A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.

REFERENCES:
patent: 4268394 (1981-05-01), Lepselter
patent: 4340462 (1982-07-01), Koch
patent: 4405435 (1983-09-01), Tateishi et al.
patent: 4431473 (1984-02-01), Okano et al.
patent: 4473455 (1984-09-01), Deaz et al.
patent: 4584045 (1986-04-01), Richards
patent: 4595484 (1986-06-01), Giammarco et al.
patent: 4670126 (1987-06-01), Messer et al.

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