Processing a workpiece using water, a base, and ozone

Details Processing a workpiece using water, a base, and ozone Processing a workpiece using water, a base, and ozone

2007-01-16

2007-01-16

El-Arini, Zeinab (Department: 1746)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S018000, C134S019000, C134S025400, C134S026000, C134S029000, C134S033000, C134S902000, C134S030000

Reexamination Certificate

active

11005495

ABSTRACT:
Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.

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