Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2004-02-05
2009-11-03
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S069000, C117S071000, C117S074000
Reexamination Certificate
active
07611578
ABSTRACT:
The invention provides a method for the production of a photonic device comprising providing a substrate, forming in the substrate substantially straight pores, lining or filling the pores with a material having voltage-dependent index of refraction, and removing part but not all of the substrate materials so that an array remains of tubes or rods of material having voltage-dependent index of refraction. In a variant of the method the deposited material is piezoelectric and the substrate is completely removed, resulting in piezoelectric tubes or rods of small diameter, generally below 10 μm.
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International Search Report dated May 26, 2004.
Morrison Finlay Doogan
Scott James Floyd
Cambridge Enterprise Ltd.
Fish & Richardson P.C.
Kunemund Robert M
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