Processes of forming insulated gate field effect transistors wit

Details Processes of forming insulated gate field effect transistors wit Processes of forming insulated gate field effect transistors wit

1975-08-25

1976-12-14

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 23, 357 58, B01J 1700

Patent

active

039966550

ABSTRACT:
The disclosure relates to methods of forming Insulated Gate Field Effect transistors and the product suitable for integrated circuits with channel lengths of 1 micron or less, the transistors being isolated from other transistors or other components in the circuit without the requirements of extra isolation steps. This is provided by means of a double diffusion which isolates the channel of the transistor from other elements in the circuit. Channel length is solely a function of the diffusion schedule through openings in the oxide through which the double diffusion takes place.

REFERENCES:
patent: 3766446 (1973-10-01), Tarui

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